Fundamentals of semiconductor devices /
Betty Lise Anderson and Richard L. Anderson.
- Second edition.
- New York, NY : McGraw-Hill Education c2018.
- xiv, 816 pages : illustrations ; 23 cm
"This International Student Edition is for use outside of the U.S."--Front cover "McGraw-Hill International Edition"--Front cover Includes index.
Part 1 - Materials -- Electron Energy and States in Semiconductors -- Homogeneous Semiconductors -- Current Flow in Homogeneous Semiconductors -- Nonhomogeneous Semiconductors-- Supplement to Part 1 -- Supplement 1ASupplement -- 1B Part 2 - Diodes -- Prototype pn Homojunctions -- Additional Considerations for Diodes -- Supplement to Part 2 -- Part 3 - Field-Effect Transistors -- The MOSFET -- Additional Considerations for FETs Supplement to Part 3 -- Part 4 - Bipolar Junction Transistors -- Bipolar Junction Devices: Statics -- Time-Dependent Analysis of BJTs Supplement to Part 4 -- Part 5 - Optoelectronic Devices -- Optoelectronic Devices -- Appendix A - Constants -- Appendix B - List of Symbols -- Appendix C - Fabrication -- Appendix D - Density-of-States Function, Density-of-States Effective Mass, Conductivity Effective Mass -- Appendix E - Some Useful Integrals -- Appendix F - Useful Equations -- Appendix G - List of Suggested Readings.